IRF6691 |
RFQ for IRF6691 Required Field |
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| Technical/Catalog Information | IRF6691 |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 6580pF @ 10V |
| Power - Max | 2.8W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 71nC @ 4.5V |
| Package / Case | DirectFET? Isometric MT |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF6691 IRF6691 IRF6691CT ND IRF6691CTND IRF6691CT |
| Product | Manufacturers | Pack | D/C |
| IRF6691 | - | QFN | 05+ |
Typical Application |
| Application Specific MOSFETsIntegrates Monolithic Trench Schottky DiodeIdeal for CPU Core DC-DC ConvertersLow Conduction LossesLow Reverse Recovery LossesLow Switching LossesLow Reverse Recovery Charge and Low VfLow Profile (<0.7 mm)Dual Sided Cooling CompatibleCompatible with existing Surface Mount Techniques |
| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 20 | V |
| VGS | Gate-to-Source Voltage | ±12 | |
| ID @ TC= 25°C | Continuous Drain Current, VGS @ 10V | 180 | A |
| ID @ TA= 25°C | Continuous Drain Current, VGS @ 10V | 32 | |
| ID @ TA= 70°C | Continuous Drain Current, VGS @ 10V | 26 | |
| IDM | Pulsed Drain Current | 260 | |
| PD @ TC= 25°C | Power Dissipation | 2.8 | W |
| PD @ TA= 25°C | Power Dissipation | 1.8 | |
| PD @ TA= 70°C | Power Dissipation | 89 | |
| Linear Derating Factor | 0.022 | W/°C | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 150 | °C |
